A device for sublimation molecular beam deposition of erbium-doped silicon films

被引：2
|
作者：
Svetlov, SP [1 ]
Chalkov, VY [1 ]
Shengurov, VG [1 ]
机构：
[1] Nizhni Novgorod State Univ, Res Physicotech Inst, Nizhnii Novgorod 603600, Russia
来源：
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 2000年 / 43卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1007/BF02758968
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The device described contains a source of Er vapors in the form of a rectangular erbium strip heated to a temperature of 800-950 degrees C by a current passing through it. The base material (Si) flow was produced by sublimation of a silicon bar cut from a single-crystal ingot. The device was used for growing epitaxial Si layers with an Er concentration of 5 x 10(18)-10(21) cm(-3).
引用
收藏
页码：564 / 565
页数：2
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