Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

被引：12

作者：

Tansel, T. ^{[1
]}

Hostut, M. ^{[2
]}

Elagoz, S. ^{[3
]}

Kilic, A. ^{[4
]}

Ergun, Y. ^{[4
]}

Aydinli, A. ^{[5
]}

机构：

[1] Hacettepe Univ, Inst Nucl Sci, Ankara, Turkey

[2] Akdeniz Univ, Div Phys Educ, Fac Educ, Antalya, Turkey

[3] Cumhuriyet Univ, Dept Nanotechnol Engn, Sivas, Turkey

[4] Anadolu Univ, Dept Phys, Eskisehir, Turkey

[5] Bilkent Univ, Dept Phys, Ankara, Turkey

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 91卷

关键词：

Superlattice; InAs/AlSb/GaSb based T2SL N-structures with AlSb; Mid wavelength infrared; DETECTORS;

D O I：

10.1016/j.spmi.2015.12.034

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification of dominant current mechanisms in each operating temperature can be used to extract minority carrier lifetimes which are highly important for understanding carrier transport and improving the detector performance. InAs/AlSb/GaSb based T2SL N-structures with AISb unipolar barriers are designed for low dark current with high resistance and detectivity. Here we present electrical and optical performance of such N-structure photodetectors. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：1 / 7

页数：7

共 50 条

[21] Novel approach to passivation of InAs/GaSb type II superlattice photodetectors
E. Papis-Polakowska
J. Kaniewski
A. Jasik
K. Czuba
I. Sankowska
P. Karbownik
T. Runka
T. Martyński
J. Makowiecki
A. Łapiński
Applied Physics B, 2019, 125
[22] InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits
Chow, DH
Dunlap, HL
Williamson, W
Enquist, S
Gilbert, BK
Subramaniam, S
Lei, PM
Bernstein, GH
IEEE ELECTRON DEVICE LETTERS, 1996, 17 (02) : 69 - 71
[23] Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array
Korkmaz, Melih
Arikan, Bulent
Suyolcu, Y. Eren
Aslan, Bulent
Serincan, Ugur
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (03)
[24] High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb Substrates
Plis, E.
Klein, B.
Myers, S.
Gautam, N.
Smith, E. P.
Krishna, S.
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (03) : 426 - 428
[25] Electrical properties of InAs/AlSb/GaSb double quantum well structures
Roslund, JH
Yamaguchi, H
Hirayama, Y
COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 127 - 130
[26] Electrical characterizations of asymmetric InAs/GaSb superlattice MWIR photodiodes
Taalat, R.
Rodriguez, J. B.
Cervera, C.
Ribet-Mohamed, I.
Christol, P.
INFRARED PHYSICS & TECHNOLOGY, 2013, 59 : 32 - 35
[27] Midinfrared InAs/GaSb type-II superlattice interband tunneling photodetectors
Mou, Shin
Petschke, Adam
Lou, Qi
Chuang, Shun Lien
Li, Jian V.
Hill, Cory J.
APPLIED PHYSICS LETTERS, 2008, 92 (15)
[28] Studies on different passivation on InAs/GaSb type-II superlattice photodetectors
Cui, Yurong
Chen, Jianxin
Xu, Zhicheng
Xu, Jiajia
Zhou, Yi
He, Li
INFRARED TECHNOLOGY AND APPLICATIONS, AND ROBOT SENSING AND ADVANCED CONTROL, 2016, 10157
[29] Ohmic contact and electrical property in InAs/GaSb superlattice material
Zhang, Liang
Zhang, Xiaolei
Zhang, Lei
6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR SENSING, IMAGING, AND SOLAR ENERGY, 2012, 8419
[30] High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices
Jiang, Junkai
Chang, Faran
Zhou, Wenguang
Li, Nong
Chen, Weiqiang
Jiang, Dongwei
Hao, Hongyue
Wang, Guowei
Wu, Donghai
Xu, Yingqiang
Niu, Zhi-Chuan
CHINESE PHYSICS B, 2023, 32 (03)

← 1 2 3 4 5 →