Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

被引：12
|
作者：
Tansel, T. [1 ]
Hostut, M. [2 ]
Elagoz, S. [3 ]
Kilic, A. [4 ]
Ergun, Y. [4 ]
Aydinli, A. [5 ]
机构：
[1] Hacettepe Univ, Inst Nucl Sci, Ankara, Turkey
[2] Akdeniz Univ, Div Phys Educ, Fac Educ, Antalya, Turkey
[3] Cumhuriyet Univ, Dept Nanotechnol Engn, Sivas, Turkey
[4] Anadolu Univ, Dept Phys, Eskisehir, Turkey
[5] Bilkent Univ, Dept Phys, Ankara, Turkey
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 91卷
关键词：
Superlattice; InAs/AlSb/GaSb based T2SL N-structures with AlSb; Mid wavelength infrared; DETECTORS;
D O I：
10.1016/j.spmi.2015.12.034
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification of dominant current mechanisms in each operating temperature can be used to extract minority carrier lifetimes which are highly important for understanding carrier transport and improving the detector performance. InAs/AlSb/GaSb based T2SL N-structures with AISb unipolar barriers are designed for low dark current with high resistance and detectivity. Here we present electrical and optical performance of such N-structure photodetectors. (C) 2016 Elsevier Ltd. All rights reserved.
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页码：1 / 7
页数：7
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