Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications

被引:8
|
作者
Berdova, Maria [1 ]
Wiemer, Claudia [2 ]
Lamperti, Alessio [2 ]
Tallarida, Grazia [2 ]
Cianci, Elena [2 ]
Lamagna, Luca [3 ]
Losa, Stefano [3 ]
Rossini, Silvia [3 ]
Somaschini, Roberto [3 ]
Gioveni, Salvatore [3 ]
Fanciulli, Marco [2 ,4 ]
Franssila, Sami [1 ]
机构
[1] Aalto Univ, Dept Mat Sci & Engn, Espoo 02150, Finland
[2] IMM CNR, Lab MDM, Via C Olivetti 2, I-20864 Agrate Brianza, MB, Italy
[3] STMicroelectronics, Via C Olivetti 2, I-20864 Agrate Brianza, MB, Italy
[4] Univ Milano Bicocca, Dipartimento Sci Mat, I-20126 Milan, Italy
关键词
Atomic layer deposition; Hafnium dioxide; HfO2; Reflectance; Humidity treatment; THIN-FILMS; HFO2; METAL; ALD; PRECURSORS; EVOLUTION; SILICON; H2O;
D O I
10.1016/j.apsusc.2016.01.216
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This work presents the investigation of HfO2 deposited by atomic layer deposition (ALD) from either HID-CO4 or TEMAHf and ozone for microelectromechanical systems (MEMS) applications, in particular, for environmental protection of aluminum micromirrors. This work shows that HfO2 films successfully protect aluminum in moist environment and at the same time retain good reflectance properties of underlying material. In our experimental work, the chemical composition, crystal structure, electronic density and roughness of HfO2 films remained the same after one week of humidity treatment (relative humidity of 85%, 85 degrees C). The reflectance properties underwent only minor changes. The observed shift in reflectance was only from 80-90% to 76-85% in 400-800 nm spectral range when coated with ALD Hf02 films grown with Hf(NMeEt)(4) and no shift (remained in the range of 68-83%) for films grown from (CpMe)(2)Hf(OMe)Me. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:470 / 476
页数:7
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