Fabrication and characteristics of a metal/ferroelectric/polycrystalline silicon/insulator/silicon field effect transistor

被引：12

作者：

Cai, Daolin ^{[1
]}

Li, Ping ^{[1
]}

Zhang, Shuren ^{[1
]}

Zhai, Yahong ^{[1
]}

Ruan, Aiwu ^{[1
]}

Ou, Yangfan ^{[1
]}

Chen, Yanyu ^{[1
]}

Wu, Dongshen ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 15期

关键词：

D O I：

10.1063/1.2724896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A n-channel metal/ferroelectric/polycrystalline silicon/insulator/silicon structure field effect transistor (FET) with a Pb(Zr0.52Ti0.48)O-3 ferroelectric layer has been proposed and demonstrated. The Pb(Zr0.52Ti0.48)O-3 ferroelectric layer (200 nm) was deposited by radio frequency magnetron sputtering. The counterclockwise drain current-gate voltage (I-d-V-g) hysteresis loops of the ferroelectric FET demonstrate the memory effect of the device. The counterclockwise hysteresis loops are attributed to the ferroelectric polarization of the Pb(Zr0.52Ti0.48)O-3 film. The memory window measured from the I-d-V-g characteristics is about 2.6 V as the V-g sweeps between -5 and +5 V. The endurance characteristics of the device have been investigated. (c) 2007 American Institute of Physics.

引用

页数：3

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