Strain-induced dimensional phase change of graphene-like boron nitride monolayers

被引:7
|
作者
Peng, Qing [1 ,2 ,3 ]
机构
[1] Univ Michigan, Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA
[2] Rensselaer Polytech Inst, Dept Mech Aerosp & Nucl Engn, Troy, NY 12180 USA
[3] Wuhan Univ, Sch Power & Mech Engn, Wuhan 430072, Hubei, Peoples R China
关键词
strain-engineering; electronic bandgap; phase change; 2D boron nitride; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; MECHANICAL-PROPERTIES; ELASTIC PROPERTIES; LOCAL STRAIN; BAND-GAP; 1ST-PRINCIPLES; TRANSITION; STABILITIES; COMPOSITES;
D O I
10.1088/1361-6528/aad2f8
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigate the coupling between the electronic bandgap and mechanical loading of graphene-like boron nitride (h-BN) monolayers up to failure strains and beyond by means of first-principles calculations. We reveal that the kinks in the bandgap-strain curve are coincident with the ultimate tensile strains, indicating a phase change. When the armchair strain is beyond the ultimate tensile strain, h-BN fails with a phase transformation from 2D honeycomb to 1D chain structure, characterized by the 'V'-shape bandgap-strain curve. Large biaxial strains can break the 2D honeycomb structures into 0D individual atoms and the bandgap closes.
引用
收藏
页数:7
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