Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films

被引：3

作者：

Hatui, Nirupam ^{[1
]}

Krishna, Athith ^{[1
]}

Pasayat, Shubhra S. ^{[1
]}

Keller, Stacia ^{[1
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS | 2021年 / 10卷 / 10期

关键词：

InGaN; N-polar; MOVPE; LIGHT-EMITTING-DIODES; INDIUM INCORPORATION; SAPPHIRE SUBSTRATE; GAN LAYERS; V-DEFECTS; GROWTH; EMISSION; ORIGIN; STRAIN; GREEN;

D O I：

10.3390/electronics10101182

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Hillock-free thick InGaN layers were grown on N-polar GaN on sapphire by metal organic vapor phase epitaxy using a digital growth scheme and H-2 as surfactant. Introducing Mg to act as an additional surfactant and optimizing the H-2 pulse time, In compositions up to 17% were obtained in 100 nm thick epilayers. Although Mg adversely affected the In incorporation, it enabled maintenance of a good surface morphology while decreasing the InGaN growth temperature, resulting in a net increase in In composition. The parameter space of growth temperature and Mg precursor flow to obtain hillock-free epilayers was mapped out.

引用

页数：7

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