A novel photoconductive PVK/SiO2 interpenetrated network prepared by the sol-gel process

被引：6
|
作者：
Ramos, G
Belenguer, T
Bernabeu, E
del Monte, F
Levy, D
机构：
[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
[2] Inst Nacl Tecnol Aeroespacial, Lab Instrumentac Espacial, Madrid 28850, Spain
[3] Univ Complutense Madrid, Fac Ciencias Fis, E-28040 Madrid, Spain
来源：
JOURNAL OF PHYSICAL CHEMISTRY B | 2003年 / 107卷 / 01期
关键词：
D O I：
10.1021/jp026759+
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this work, we describe the preparation of a novel photoconductive sol-gel material based on an organic/inorganic interpenetrating network (IPN). The composition of the sol-gel photoconductive material mimics the well-known polymeric one based on poly(N-vinylcarbazole) (PVK) as the charge-transporting matrix and 2,4,7-trinitro-9-fluorenone (TNF) as the sensitizer. The resulting photoconductive material (PVK/SiO2 IPN) shows a photosensitivity of 10(-11) cm/(Omega W) in range to that reported for some analogue polymeric compounds and the highest ever reported for hybrid sol-gel materials.
引用
收藏
页码：110 / 112
页数：3
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