Effect of neutron irradiation on Ga-based semiconductors

被引：0

作者：

Damonte, LC ^{[1
]}

Navarro, FJ

Ferrero, JL

Segura, A

Munoz, V

机构：

[1] Natl Univ La Plata, Fac Ciencias Exactas, Dept Fis, RA-1900 La Plata, Argentina

[2] Univ Politecn Valencia, Dept Fis Aplicada, E-46071 Valencia, Spain

[3] Univ Valencia, Inst Ciencia Mat, E-46100 Burjassot, Spain

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

neutron irradiation; positron annihilation; GaSe; GaS; POSITRONS; DEFECTS; INP;

D O I：

10.4028/www.scientific.net/MSF.258-263.1235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Neutron irradiation GaS and GaSe single crystals have been investigated by positron lifetime and Doppler broadening measurements. The samples were irradiated at fluences yielding estimated Ge concentrations within 2.5x10(15) and 2x10(16) cm(-3). The positron annihilation parameters (average lifetime, tau(m), and parameter S) have shown a saturation effect with increasing radiation doses. A second lifetime component was found of 335 ps in GaSe and of 330 ps in GaS. These lifetimes have been associated to Ga-monovacancy related defects.

引用

页码：1235 / 1240

页数：6

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