Annealing behavior of gate oxide leakage current after quasi-breakdown

被引：3

作者：

Xu, Z ^{[1
]}

Cho, BJ ^{[1
]}

Li, MF ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect Engn, Singapore 119260, Singapore

来源：

MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 8-10期

关键词：

D O I：

10.1016/S0026-2714(00)00129-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Annealing behavior of thin gate oxide alter quasi-breakdown (QB) has been investigated. The res;lt implies that the QB leakage current is consisted, of two components: the enhanced tunneling due to locally thinned oxide at interface-damaged region and the conduction through a shortening path. The change of leakage current during annealing is a competitive process of changes of these two components - the recovery of interface damage and the expansion of the shortening path in bulk oxide. A unified model is proposed to explain the mechanism of conduction in QB. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：1341 / 1346

页数：6

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