Low temperature mobility of steps on the 4He crystal facets:: Effects of 3He impurities

被引：7
|
作者：
Parshin, AY [1 ]
机构：
[1] PL Kapitza Phys Problems Inst, Moscow 117334, Russia
来源：
JOURNAL OF LOW TEMPERATURE PHYSICS | 1998年 / 110卷 / 1-2期
关键词：
D O I：
10.1023/A:1022579120845
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
At low temperatures, the dissipation due to scattering of thermal phonons by elementary steps on the facets of helium crystals is very small, He-3 impurities may dominate in dissipative processes even at low concentrations. We calculate the step mobility determined by collisions of the step with impurities in bulk liquid and impurities absorbed on the liquid-solid interface, in. different temperature and concentration regions.
引用
收藏
页码：133 / 140
页数：8
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