Single-Electron Transport through Single Dopants in a Dopant-Rich Environment

被引：85

作者：

Tabe, Michiharu ^{[1
]}

Moraru, Daniel ^{[1
]}

Ligowski, Maciej ^{[1
,2
]}

Anwar, Miftahul ^{[1
]}

Jablonski, Ryszard ^{[2
]}

Ono, Yukinori ^{[3
]}

Mizuno, Takeshi ^{[1
]}

机构：

[1] Shizuoka Univ, Elect Res Inst, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

[2] Warsaw Univ Technol, Div Sensors & Measuring Syst, PL-02525 Warsaw, Poland

[3] NTT Corp, NTT Basic Res Labs, Kanagawa 0108502, Japan

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 01期

关键词：

DOPED SILICON NANOWIRES; QUANTUM-WIRE; FLUCTUATIONS; DEVICES; ATOM; DOTS;

D O I：

10.1103/PhysRevLett.105.016803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that single-electron transport through a single dopant can be achieved even in a random background of many dopants without any precise placement of individual dopants. First, we observe potential maps of a phosphorus-doped channel by low-temperature Kelvin probe force microscopy, and demonstrate potential changes due to single-electron trapping in single dopants. We then show that only one or a small number of dopants dominate the initial stage of source-drain current vs gate voltage characteristics in scaled-down, doped-channel, field-effect transistors.

引用

页数：4

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