Preparation of ferroelectric Pb(Zr0.5,Ti0.5)O3 thin films by sol-gel process:: dielectric and ferroelectric properties

被引：13
|
作者：
Thomas, R [1 ]
Mochizuki, S [1 ]
Mihara, T [1 ]
Ishida, T [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Osaka 5638577, Japan
来源：
MATERIALS LETTERS | 2003年 / 57卷 / 13-14期
关键词：
ferroelectrics; sol-gel preparation; electrical properties; lead zirconate titanate; perovskite; crystal structure;
D O I：
10.1016/S0167-577X(02)01130-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ferroelectric lead zirconium titanate (Pb(Z(0.5),Ti-0.5)O-3) thin films were prepared by sol-gel spin coating technique. Three-step pre-annealing heat treatment was employed to prepare crack-free films. Phase-pure perovskite crystallization was obtained by annealing the films on Pt/Ti/Corning 7059 glass substrates at 550 degreesC. Films were having fine-grained microstructure with average grain size of the order of 20 nm. Resistivity of the 0.54-mum-thick film was the order of 10(10) Omega cm at 15 V. Dielectric constant and loss tangent at 10 kHz were in the range 1000-1250 and 0.04-0.077, respectively. Remanent polarization (P-r) and coercive field (E-c) were in the range 26-29 muC/cm(2) and 49-58 kV/cm, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：2007 / 2014
页数：8
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