Optically injected InAs/GaAs quantum dot laser for tunable photonic microwave generation

被引:54
|
作者
Wang, Cheng [1 ,2 ]
Raghunathan, Ravi [1 ]
Schires, Kevin [1 ]
Chan, Sze-Chun [2 ,3 ]
Lester, Luke F. [4 ]
Grillot, Frederic [1 ,5 ]
机构
[1] Univ Paris Saclay, Telecom ParisTech, CNRS, LTCI, 46 Rue Barrault, F-75634 Paris 13, France
[2] City Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
[3] City Univ Hong Kong, State Key Lab Millimeter Waves, Hong Kong, Hong Kong, Peoples R China
[4] Virginia Tech, Dept Elect & Comp Engn, Blacksburg, VA 24061 USA
[5] Univ New Mexico, Ctr High Technol Mat, 1313 Goddard SE, Albuquerque, NM 87106 USA
基金
中国国家自然科学基金;
关键词
ONE NONLINEAR DYNAMICS; PERIOD-ONE OSCILLATION; RANDOM BIT GENERATION; SIDE-BAND MODULATION; SEMICONDUCTOR-LASER; DIODE;
D O I
10.1364/OL.41.001153
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present an experimental investigation on the period-one dynamics of an optically injected InAs/GaAs quantum dot laser as a photonic microwave source. It is shown that the microwave frequency of the quantum dot laser's period-one oscillation is continuously tunable through the adjustment of the frequency detuning. The microwave power is enhanced by increasing the injection strength providing that the operation is away from the Hopf bifurcation, whereas the second-harmonic distortion of the electrical signal is well reduced by increasing the detuning frequency. Both strong optical injection and high detuning frequency are favorable for obtaining a single sideband optical signal. In addition, particular period-one oscillation points of low sensitivity to the frequency detuning are found close to the Hopf bifurcation line. (C) 2016 Optical Society of America
引用
收藏
页码:1153 / 1156
页数:4
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