Electrically injected InAs/GaAs quantum dot spin laser operating at 200 K

被引：66
|
作者：
Basu, D. [1 ]
Saha, D. [1 ]
Wu, C. C. [1 ]
Holub, M. [1 ]
Mi, Z. [1 ]
Bhattacharya, P. [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期
关键词：
D O I：
10.1063/1.2883953
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A spin-polarized vertical cavity surface emitting laser, with InAs/GaAs self-organized quantum dots as the active gain media, has been fabricated and characterized. Electron spin injection is achieved via a MnAs/GaAs Schottky tunnel contact. The laser is operated at 200 K and, at this temperature, the degree of circular polarization in the output is 8% and the maximum threshold current reduction is 14%. These effects are not observed in identical control devices with nonmagnetic contacts. (C) 2008 American Institute of Physics.
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页数：3
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