Quantitative investigation of SiGeC layers using atom probe tomography

被引：7
|
作者：
Estivill, Robert [1 ,2 ,3 ]
Grenier, Adeline [1 ]
Duguay, Sebastien [3 ]
Vurpillot, Francois [3 ]
Terlier, Tanguy [1 ]
Barnes, Jean-Paul [1 ]
Hartmann, Jean-Michel [1 ]
Blavette, Didier [3 ]
机构：
[1] CEA, LETI, F-38054 Grenoble 9, France
[2] STMicroelectronics, F-38926 Crolles, France
[3] Univ Rouen, CNRS, UMR 6634, GPM, F-76821 Mont St Aignan, France
来源：
ULTRAMICROSCOPY | 2015年 / 150卷
关键词：
Atom probe; SiGe quantification; Carbon doped SiGe; Molecular ions; Multi-events; FIELD EVAPORATED IONS; POST-IONIZATION; MASS-SPECTRA; CARBON; ALLOYS; STEEL;
D O I：
10.1016/j.ultramic.2014.11.020
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
The quantification of carbon and germanium in a Si/SiGeC multilayer structure using atom probe tomography has been investigated as a function of analysis conditions. The best conditions for quantitative results are obtained using an intermediate electric field and laser power. Carbon evaporation shows strong spatial and temporal correlation. By using multi ion event analysis, an evaporation mechanism is put forward to explain the modification of mass spectra as a function of electric field and laser power. (C) 2014 Elsevier B.V. All rights reserved.
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页码：23 / 29
页数：7
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