Terahertz rectification in ring-shaped quantum barriers

被引:0
|
作者
Kang, Taehee [1 ,2 ]
Kim, R. H. Joon-Yeon [1 ,2 ,5 ]
Choi, Geunchang [1 ,2 ,6 ]
Lee, Jaiu [1 ,2 ]
Park, Hyunwoo [3 ]
Jeon, Hyeongtag [3 ]
Park, Cheol-Hwan [1 ,4 ]
Kim, Dai-Sik [1 ,2 ]
机构
[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea
[2] Seoul Natl Univ, Ctr Atom Scale Electromagnetism, Seoul 08826, South Korea
[3] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
[4] Seoul Natl Univ, Ctr Theoret Phys, Seoul 08826, South Korea
[5] Iowa State Univ, Ames Lab, Dept Phys & Astron, Ames, IA 50011 USA
[6] Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea
来源
NATURE COMMUNICATIONS | 2018年 / 9卷
基金
新加坡国家研究基金会;
关键词
NANOMETER-SIZED GAPS; FIELD ENHANCEMENT; INFRARED FREQUENCIES; ATTOSECOND CONTROL; TUNNEL-JUNCTION; ELECTRIC-FIELDS; ANGSTROM; TIME; REGIME; DIODE;
D O I
10.1038/s41467-018-07365-W
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Tunneling is the most fundamental quantum mechanical phenomenon with wide-ranging applications. Matter waves such as electrons in solids can tunnel through a one-dimensional potential barrier, e.g. an insulating layer sandwiched between conductors. A general approach to control tunneling currents is to apply voltage across the barrier. Here, we form closed loops of tunneling barriers exposed to external optical control to manipulate ultrafast tunneling electrons. Eddy currents induced by incoming electromagnetic pulses project upon the ring, spatiotemporally changing the local potential. The total tunneling current which is determined by the sum of contributions from all the parts along the perimeter is critically dependent upon the symmetry of the loop and the polarization of the incident fields, enabling full-wave rectification of terahertz pulses. By introducing global geometry and local operation to current-driven circuitry, our work provides a novel platform for ultrafast optoelectronics, macroscopic quantum phenomena, energy harvesting, and multi-functional quantum devices.
引用
收藏
页数:8
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