Electric-and magnetic-field dependence of the electronic and optical properties of phosphorene quantum dots

被引:39
|
作者
Li, L. L. [1 ,2 ]
Moldovan, D. [1 ]
Xu, W. [2 ,3 ]
Peeters, F. M. [1 ]
机构
[1] Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
[2] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
[3] Yunnan Univ, Dept Phys, Kunming 650091, Peoples R China
基金
中国国家自然科学基金;
关键词
phosphorene quantum dots; electronic and optical properties; electric and magnetic fields; BLACK PHOSPHORUS; OPTOELECTRONICS; NANORIBBONS; MOBILITY;
D O I
10.1088/1361-6528/aa55e8
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Recently, black phosphorus quantum dots were fabricated experimentally. Motivated by these experiments, we theoretically investigate the electronic and optical properties of rectangular phosphorene quantum dots (RPQDs) in the presence of an in-plane electric field and a perpendicular magnetic field. The energy spectra and wave functions of RPQDs are obtained numerically using the tight-binding approach. We find edge states within the band gap of the RPQD which are well separated from the bulk states. In an undoped RPQD and for in-plane polarized light, due to the presence of well-defined edge states, we find three types of optical transitions which are between the bulk states, between the edge and bulk states, and between the edge states. The electric and magnetic fields influence the bulk-to-bulk, edge-to-bulk, and edge-to- edge transitions differently due to the different responses of bulk and edge states to these fields.
引用
收藏
页数:8
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