Effects of interfacial asymmetry on the folded longitudinal acoustic phonons in Si/Ge and GaAs/AlxGa1-xAs superlattices

被引：0

作者：

Teixeira, AMR ^{[1
]}

Silva, MAA ^{[1
]}

Farias, GA ^{[1
]}

Costa, RN ^{[1
]}

Freire, VN ^{[1
]}

机构：

[1] Univ Fed Ceara, Dept Fis, BR-60455760 Fortaleza, Ceara, Brazil

来源：

PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 1998年 / 1-2卷

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A theoretical analysis is performed of the effects of interfacial asymmetry in Si/Ge and GaAs/AlxGa1-xAs superlattices. It is assumed that the interfacial alloy density of both superlattices changes linearly. It is shown that the longitudinal acoustic (LA) phonon energies decrease (increase) if the interfaces resulting from the growth of Ge on Si or AlxGa1-xAs on GaAs are thicker (thinner) than the interfaces resulting from the growth of Si on Ge or GaAs on AlxGa1-xAs. These effects increase with the degree of interfacial asymmetry, and are stronger in Si/Ge than in GaAs/AlxGa1-xAs superlattices.

引用

页码：71 / 75

页数：5

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