Temperature Compensation and Pressure Bias Estimation for Piezoresistive Pressure Sensor Based on Machine Learning Approach

被引:8
|
作者
Ruan, Yi [1 ]
Yuan, Lifen [1 ]
Yuan, Weibo [1 ]
He, Yigang [2 ]
Lu, Li [1 ]
机构
[1] Hefei Univ Technol, Sch Elect Engn & Automat, Hefei 230009, Peoples R China
[2] Wuhan Univ, Sch Elect Engn, Wuhan 430072, Peoples R China
基金
中国国家自然科学基金;
关键词
Bias of input pressure; dynamic chaos quantum-behaved particle swarm optimization (DCQPSO); estimation; multi-kernel relevance vector machine (MKRVM); piezoresistive pressure sensor; temperature compensation; temperature effect; MODEL;
D O I
10.1109/TIM.2021.3089236
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The requirements for accuracy of piezoresistive pressure sensors in modern society are becoming increasingly high. Besides, a wide application range of sensor is required. However, due to the influence of material properties, many piezoresistive pressure sensors have high temperature coefficient, which limits their application temperature range. With the change of ambient temperature, the response characteristic of the sensor has strong nonlinearity. To solve the above-mentioned crucial problems, a dynamic chaos quantum-behaved particle swarm optimization optimized multiple kernel relevance vector machine (DCQPSO-MKRVM) algorithm is presented in this article. First, a basic theory of temperature effect is given and a new idea of temperature compensation is proposed. Second, the multi-kernel relevance vector machine (MKRVM) is adopted to estimate the bias values of input pressure. Through heterogeneous kernel learning method, the kernels of MKRVM maintain diversity to obtain higher estimation accuracy. Third, dynamic chaos quantum-behaved particle swarm optimization (DCQPSO) is employed to optimize the optimal sparse weights of kernel functions in MKRVM. Moreover, the dynamic parameter is applied for the boundary of chaos search between original quantum-behaved particle swarm optimization (QPSO) swarm and the chaos swarm. The experimental result indicates the complex nonlinear relationship of temperature effect, and the method proposed in this article can effectively and accurately estimate the bias of input pressure fast to achieve temperature compensation goal. The mean relative accuracy (MRA) of estimation results achieves 99.5%. It proves that the method proposed in this article is applicable and effective for industrial applications.
引用
收藏
页数:10
相关论文
共 50 条
  • [31] Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor
    Devi, Rekha
    Gill, Sandeep Singh
    SILICON, 2022, 14 (08) : 3931 - 3938
  • [32] A High Precision Software Compensation Algorithm for Silicon Piezoresistive Pressure Sensor
    WU Tianshu
    CHEN Shuyu
    WU Peng
    NIE Shaozhong
    ChineseJournalofElectronics, 2019, 28 (04) : 748 - 753
  • [33] Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor
    Rekha Devi
    Sandeep Singh Gill
    Silicon, 2022, 14 : 3931 - 3938
  • [34] Accurate Nonlinearity and Temperature Compensation Method for Piezoresistive Pressure Sensors Based on Data Generation
    Zou, Mingxuan
    Xu, Ye
    Jin, Jianxiang
    Chu, Min
    Huang, Wenjun
    SENSORS, 2023, 23 (13)
  • [35] Silicon Multi-Stage Current-Mode Piezoresistive Pressure Sensor with Analog Temperature Compensation
    Coraucci, Guilherme de Oliveira
    Fruett, Fabiano
    Finco, Saulo
    2011 IEEE SENSORS, 2011, : 1526 - 1529
  • [36] Differential piezoresistive pressure sensor
    Firtat, B.
    Moldovan, C.
    Iosub, R.
    Necula, D.
    Nisulescu, M.
    CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2007, : 87 - 90
  • [37] A PIEZORESISTIVE INTEGRATED PRESSURE SENSOR
    YAMADA, K
    NISHIHARA, M
    KANZAWA, R
    KOBAYASHI, R
    SENSORS AND ACTUATORS, 1983, 4 (01): : 63 - 69
  • [38] A silicon piezoresistive pressure sensor
    Singh, R
    Ngo, LL
    Seng, HS
    Mok, FNC
    FIRST IEEE INTERNATION WORKSHOP ON ELECTRONIC DESIGN, TEST AND APPLICATIONS, PROCEEDINGS, 2002, : 181 - 184
  • [39] Flexible Contact Pressure Sensor Based on Ultrathin Piezoresistive Silicon Membrane Capable of Strain Compensation
    Takei, Yusuke
    Goto, Shintaro
    Takamatsu, Seiichi
    Itoh, Toshihiro
    Kobayashi, Takeshi
    SENSORS AND MATERIALS, 2018, 30 (12) : 2999 - 3007
  • [40] Design optimization of high pressure and high temperature piezoresistive pressure sensor for high sensitivity
    Niu, Zhe
    Zhao, Yulong
    Tian, Bian
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2014, 85 (01):