A high-performance top-gate graphene field-effect transistor based frequency doubler

被引：101

作者：

Wang, Zhenxing ^{[1
]}

Zhang, Zhiyong ^{[1
]}

Xu, Huilong ^{[1
]}

Ding, Li ^{[1
]}

Wang, Sheng ^{[1
]}

Peng, Lian-Mao ^{[1
]}

机构：

[1] Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 17期

关键词：

capacitance; field effect transistors; frequency multipliers; frequency response; graphene;

D O I：

10.1063/1.3413959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-performance top-gate graphene field-effect transistor (G-FET) is fabricated, and used for constructing a high efficient frequency doubler. Taking the advantages of the high gate efficiency and low parasitic capacitance of the top-gate device geometry, the gain of the graphene frequency doubler is increased about ten times compared to that of the back-gate G-FET based device. The frequency response of the frequency doubler is also pushed from 10 kHz for a back-gate device to 200 kHz, at which most of the output power is concentrated at the doubled fundamental frequency of 400 kHz.

引用

页数：3

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