A high-performance top-gate graphene field-effect transistor based frequency doubler

被引：101
|
作者：
Wang, Zhenxing [1 ]
Zhang, Zhiyong [1 ]
Xu, Huilong [1 ]
Ding, Li [1 ]
Wang, Sheng [1 ]
Peng, Lian-Mao [1 ]
机构：
[1] Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 17期
关键词：
capacitance; field effect transistors; frequency multipliers; frequency response; graphene;
D O I：
10.1063/1.3413959
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A high-performance top-gate graphene field-effect transistor (G-FET) is fabricated, and used for constructing a high efficient frequency doubler. Taking the advantages of the high gate efficiency and low parasitic capacitance of the top-gate device geometry, the gain of the graphene frequency doubler is increased about ten times compared to that of the back-gate G-FET based device. The frequency response of the frequency doubler is also pushed from 10 kHz for a back-gate device to 200 kHz, at which most of the output power is concentrated at the doubled fundamental frequency of 400 kHz.
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页数：3
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