Hole transport enhancement by thickness- and composition-grading of electron blocking layer

被引：3
|
作者：
Usman, Muhammad [1 ]
Munsif, Munaza [1 ]
Anwar, Abdur-Rehman [1 ]
Malik, Shahzeb [1 ]
Islam, Noor U. [1 ]
Khan, Sibghatullah [1 ]
机构：
[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi, Khyber Pakhtunk, Pakistan
来源：
OPTICAL ENGINEERING | 2021年 / 60卷 / 03期
关键词：
InGaN; light-emitting diodes; efficiency; green; simulation; LIGHT-EMITTING-DIODES; QUANTUM EFFICIENCY;
D O I：
10.1117/1.OE.60.3.036101
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have numerically examined the advantages of thickness- and composition-grading of the electron blocking layer (EBL) in InGaN multiquantum well light-emitting diodes. We have enhanced the hole confinement inside the active region, which is critical in GaN-based devices. Low hole injection is more severe when conventional wide bandgap AlGaN EBL is inserted between the last GaN quantum barrier and the p-GaN layer. The results obtained show reduced valence band offset leading to improved hole injection and enhanced device performance. (C) 2021 Society of Photo-Optical Instrumentation Engineers (SPIE)
引用
收藏
页数：7
相关论文
共 50 条
  • [21] A Novel Concept of Electron-Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer
    Wang, Zhigang
    Yang, Chong
    Huang, Xiaobing
    MICROMACHINES, 2023, 14 (03)
  • [22] Polymer bulk heterojunction solar cells: function and utility of inserting a hole transport and electron blocking layer into the device structure
    Sun, Yanming
    Wang, Mingfeng
    Gong, Xiong
    Seo, Jung Hwa
    Hsu, Ben B. Y.
    Wudl, Fred
    Heeger, Alan J.
    JOURNAL OF MATERIALS CHEMISTRY, 2011, 21 (05) : 1365 - 1367
  • [23] Wedge-shaped electron blocking layer to improve hole transport and efficiency in green light-emitting diodes
    Usman, Muhammad
    Munsif, Munaza
    Anwar, Abdur-Rehman
    OPTICS COMMUNICATIONS, 2020, 464 (464)
  • [24] Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer
    Amir Muhammad Afzal
    In-Gon Bae
    Yushika Aggarwal
    Jaewoo Park
    Hye-Ryeon Jeong
    Eun Ha Choi
    Byoungchoo Park
    Scientific Reports, 11
  • [25] Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer
    Afzal, Amir Muhammad
    Bae, In-Gon
    Aggarwal, Yushika
    Park, Jaewoo
    Jeong, Hye-Ryeon
    Ha Choi, Eun
    Park, Byoungchoo
    SCIENTIFIC REPORTS, 2021, 11 (01)
  • [26] Electron-blocking mechanisms at the hole transport layer-emissive layer interface in polymer light-emitting diodes. Enhanced device performance with a novel electron-blocking interlayer
    Yan, H
    Marks, TJ
    ORGANIC LIGHT-EMITTING MATERIALS AND DEVICES VIII, 2004, 5519 : 270 - 278
  • [27] Detectivity Enhancement in Cascade Infrared Upconverter Utilizing AlInP Hole-Blocking Layer
    Xie, Li-Li
    Hao, Zhi-Biao
    Wang, Chao
    Liu, Ya-Qi
    Luo, Yi
    Wang, Lai
    Wang, Jian
    Xiong, Bing
    Sun, Chang-Zheng
    Han, Yan-Jun
    Li, Hong-Tao
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2017, 29 (11) : 905 - 908
  • [28] Copper iodide as inorganic hole conductor for peroyskite solar cells with different thickness of mesoporous layer and hole transport layer
    Huangfu, Minzan
    Shen, Yue
    Zhu, Gongbo
    Xu, Kai
    Cao, Meng
    Gu, Feng
    Wang, Linjun
    APPLIED SURFACE SCIENCE, 2015, 357 : 2234 - 2240
  • [29] Layer interdependence of transport in an undoped electron-hole bilayer
    Morath, Christian P.
    Seamons, John A.
    Reno, John L.
    Lilly, Mike P.
    PHYSICAL REVIEW B, 2008, 78 (11)
  • [30] Organic light emitting devices with doped electron transport and hole blocking layers
    Tardy, J
    Ben Khalifa, M
    Vaufrey, D
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (2-3): : 196 - 201
12345