Hole transport enhancement by thickness- and composition-grading of electron blocking layer

被引：3
|
作者：
Usman, Muhammad [1 ]
Munsif, Munaza [1 ]
Anwar, Abdur-Rehman [1 ]
Malik, Shahzeb [1 ]
Islam, Noor U. [1 ]
Khan, Sibghatullah [1 ]
机构：
[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi, Khyber Pakhtunk, Pakistan
来源：
OPTICAL ENGINEERING | 2021年 / 60卷 / 03期
关键词：
InGaN; light-emitting diodes; efficiency; green; simulation; LIGHT-EMITTING-DIODES; QUANTUM EFFICIENCY;
D O I：
10.1117/1.OE.60.3.036101
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have numerically examined the advantages of thickness- and composition-grading of the electron blocking layer (EBL) in InGaN multiquantum well light-emitting diodes. We have enhanced the hole confinement inside the active region, which is critical in GaN-based devices. Low hole injection is more severe when conventional wide bandgap AlGaN EBL is inserted between the last GaN quantum barrier and the p-GaN layer. The results obtained show reduced valence band offset leading to improved hole injection and enhanced device performance. (C) 2021 Society of Photo-Optical Instrumentation Engineers (SPIE)
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页数：7
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