Effect of pits in InGaN/GaN multi-quantum wells on the strain and in composition segregation

被引：0
|
作者：
Yang, ZJ
Tong, YZ
Zhang, GY [1 ]
Du, XL
Fujii, N
Jia, AW
Yoshikawa, A
机构：
[1] Beijing Univ, Dept Phys, Mesoscop Phys Lab, Beijing 100871, Peoples R China
[2] Chiba Univ, Venture Business Lab, Ctr Frontier Elect & Photon, Inage Ku, Chiba 2638522, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2000年 / 180卷 / 01期
关键词：
D O I：
10.1002/1521-396X(200007)180:1<81::AID-PSSA81>3.0.CO;2-L
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Two different kinds of pits in InGaN/GaN MQWs were observed. They are generated by In atoms in the InGaN quantum well layers migrating in opposite directions, which may imply different mechanisms for the pit formation.
引用
收藏
页码：81 / 84
页数：4
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