The effect of ion sputtering of silicon substrates on the catalyst morphology and growth of carbon nanotube arrays

被引:0
|
作者
Zheng, Ruiting [1 ,2 ]
Zhao, Yong [1 ]
Cheng, Guoan [1 ]
Collins, Kimberlee [2 ]
Chiesa, Matteo [2 ,3 ]
机构
[1] Beijing Normal Univ, Coll Nucl Sci & Technol, Minist Educ, Key Lab Radiat Beam Technol & Mat Modificat, Beijing 100875, Peoples R China
[2] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
[3] Masdar Inst Sci & Technol, Mat Sci Program, Abu Dhabi, U Arab Emirates
基金
中国国家自然科学基金;
关键词
Carbon nanotubes; Sputter; Catalyst; FIELD-EMISSION PROPERTIES; EMITTERS;
D O I
10.1016/j.nimb.2009.12.015
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Polished Si substrates are sputtered by He ions, and carbon nanotube arrays are prepared on the Fe-coated substrates by heat chemical vapor deposition from acetylene. Scanning electron microscopy and atomic force microscopy are employed to examine the morphologies of sputtered substrates, catalyst and carbon nanotube arrays. It is found that ion sputtering is effective in increasing the roughness of Si substrates, and helpful in obtaining higher density Fe catalyst particles and better-aligned carbon nanotube arrays. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:568 / 572
页数:5
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