Optical and electrical properties of vapour phase grown Zn1-xCrxTe crystals

被引：3
|
作者：
Krishnaiah, G. [1 ]
Reddy, B. K. [2 ]
Rao, N. Madhusudhana [3 ]
Subrahmanyam, J. [2 ]
Reddy, D. Raja [2 ]
Rao, J. L. [2 ]
Reddy, P. Sreedhara [2 ]
机构：
[1] SVA Govt Coll M, Dept Phys, Srikalahasti 517644, India
[2] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
[3] VIT Univ, Sch Sci & Humanities, Vellore, Tamil Nadu, India
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 10期
关键词：
Zn1-xCrxTe crystals; Resistivity; Diffuse reflectance; Vapour phase growth; II-VI-COMPOUNDS; SEMICONDUCTOR; ABSORPTION; EPR;
D O I：
10.1016/j.tsf.2009.07.194
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The optical and electrical properties of vapour phase grown crystals of diluted magnetic semiconductor Zn1-xCrxTe were investigated for 0 <= x <= 0.005. The diffuse reflectance spectra exhibited an increase in the fundamental absorption edge (E-0) with composition x and were also dominated by a broad absorption band around 5200 cm(-1) arising from T-5(2)-> E-5 transition. The T-5(2) and E-5 levels originate from the crystal field splitting of the D-5 free ion in the ground state. The electrical resistivity measurements revealed semiconducting behaviour of the samples with p-type conductivity in the temperature range of 200-450 K. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：2599 / 2602
页数：4
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