This paper reports a measurement of residual stresses at different temperatures in plasma sprayed electrolyte thin-film on the cathode substrate of a solid oxide fuel cell. The study is carried out on a sample with bi-layer structure consisting of a thin-film of 8 mol% yttria-stabilized zirconia (8YSZ) and a Ca-doped LaMnO(3) cathode substrate fabricated by Siemens' plasma spray technology. The lattice deformation is directly measured by the high-temperature X-ray diffractometry, from which the state and level of the residual stresses in the YSZ layer are further evaluated using the sin(2)psi-methodology. The results reveal that the stresses in the electrolyte film are compressive in nature and remain essentially unchanged from room temperature to 600 degrees C. Above 600 degrees C, the compressive stresses monotonically decrease with the temperature as the lattice relaxation prevails. At 1000 degrees C, the electrolyte layer is still under compression, implying good bonding and very likely low interfacial contact resistance within the structure. (C) 2010 Elsevier B.V. All rights reserved.
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Korea Univ, Sch Elect Engn, Seoul 136701, South KoreaKorea Univ, Sch Elect Engn, Seoul 136701, South Korea
Heo, Keun
Cho, Kyung-Sang
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Res Ctr Time Domain Nanofunct Device, Suwon 446712, South Korea
Samsung Adv Inst Technol, Device Lab, Suwon 446712, South KoreaKorea Univ, Sch Elect Engn, Seoul 136701, South Korea
Cho, Kyung-Sang
Choi, Jun Young
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机构:Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
Choi, Jun Young
Han, Sangmin
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Cheongju Univ, Dept Semicond Engn, Cheongju 360764, South KoreaKorea Univ, Sch Elect Engn, Seoul 136701, South Korea
Han, Sangmin
Yu, Yun Seop
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Hankyong Natl Univ, Dept Elect Elect & Control Engn, Anseong 456749, South KoreaKorea Univ, Sch Elect Engn, Seoul 136701, South Korea
Yu, Yun Seop
Park, Yonmook
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Smart Machine Ctr, MINDs Lab, 49 Daewang Pangyo Ro 644, Seongnam Si 13493, South KoreaKorea Univ, Sch Elect Engn, Seoul 136701, South Korea
Park, Yonmook
Yoo, Gwangwe
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Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 16419, South KoreaKorea Univ, Sch Elect Engn, Seoul 136701, South Korea
Yoo, Gwangwe
Park, Jin-Hong
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Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 16419, South KoreaKorea Univ, Sch Elect Engn, Seoul 136701, South Korea
Park, Jin-Hong
Hwang, Sung Woo
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Res Ctr Time Domain Nanofunct Device, Suwon 446712, South Korea
Samsung Adv Inst Technol, Device Lab, Suwon 446712, South KoreaKorea Univ, Sch Elect Engn, Seoul 136701, South Korea
Hwang, Sung Woo
Lee, Sang Yeol
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Cheongju Univ, Dept Semicond Engn, Cheongju 360764, South KoreaKorea Univ, Sch Elect Engn, Seoul 136701, South Korea