Nano-structure fabrication for HgCdTe ultra-fast infrared sensors

被引：1

作者：

Wang, Shao-Wei ^{[1
]}

Yang, Jianrong ^{[2
]}

Chen, Yifang ^{[3
]}

Zhen, Honglou ^{[1
]}

Chen, Xiaoshuang ^{[1
]}

Lu, Wei ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

[3] Rutherford Appleton Lab, Micro & Nanotechnol Ctr, Didcot OX11 0QX, Oxon, England

来源：

8TH CHINA INTERNATIONAL NANOSCIENCE AND TECHNOLOGY SYMPOSIUM (CINSTS09) | 2009年 / 188卷

基金：

中国国家自然科学基金;

关键词：

LITHOGRAPHY;

D O I：

10.1088/1742-6596/188/1/012023

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High-speed infrared sensors are necessary for broad applications in optic fibre communications with high data capacity and high security and distance sensing by laser. In this paper, an ultra-fast infrared sensor with 100 nm ballistic channels has been proposed and successfully fabricated by electron beam lithography. The area of photosensitive surface is as large as 100 mu m X 100 mu m to ensure its high sensitivity. The principle is based on the ballistic transport of electrons in the nano-scale channels. The frequency is expected to be in the range of 10 GHz, one or two orders higher than conventional photovoltaic sensors.

引用

页数：5

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