Electron-phonon interaction in anisotropic uniaxial double heterostructures

For a double semiconductor heterostructure having as interjacent layer an anisotropic uniaxial polar material with the optical axis directed along the normal to the interface, the eigenfrequencies and the eigenvectors of the held of the optical phonons are obtained in the context of the dielectric continuum model. The form of the operator describing the interaction between the phonon modes and an electron is derived. The results are particularized to the case of a heterostructure made of zincbfende-type semiconductors InP and GaAs with the pseudo-morphic layer uniaxially distorted by the built-in strain distribution.