Electron-Phonon Interaction in Quantum Wells Based on Uniaxial Materials

被引:4
|
作者
Maslov, A. Yu [1 ]
Proshina, O., V [1 ]
机构
[1] Ioffe Inst, St Petersburg 194021, Russia
关键词
quantum well; uniaxial materials; interface optical phonons; electron-phonon interaction; polaron; POLARON MASS;
D O I
10.1134/S1063782619160164
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The interaction of charged particles with interface optical phonons in quantum wells composed of uniaxially symmetric materials is studied theoretically. It is shown that the character of this interaction depends considerably on the degree of anisotropy of the phonon spectrum in the materials forming the quantum well and the barriers. In the case of strong anisotropy, the interaction turns out to be significantly weaker than it is in similar structures made of materials with cubic symmetry. In the case of weak phonon anisotropy, the interaction of charged particles with optical phonons can under certain conditions be described by a Frohlich-type coupling constant, and both weak and strong electron-phonon interaction can take place in different structures. The results obtained extend the possibilities of the optical diagnostics of quantum nanostructures.
引用
收藏
页码:1617 / 1621
页数:5
相关论文
共 50 条
  • [1] Electron–Phonon Interaction in Quantum Wells Based on Uniaxial Materials
    A. Yu. Maslov
    O. V. Proshina
    [J]. Semiconductors, 2019, 53 : 1617 - 1621
  • [2] Electron-phonon interaction in double quantum wells
    Ploch, D.
    Sheregii, E. M.
    Marchewka, M.
    Wozny, M.
    Tomaka, G.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 9, 2009, 6 (09): : 2076 - 2079
  • [3] MICROSCOPIC CALCULATION OF THE ELECTRON-PHONON INTERACTION IN QUANTUM-WELLS
    RUCKER, H
    MOLINARI, E
    LUGLI, P
    [J]. PHYSICAL REVIEW B, 1992, 45 (12): : 6747 - 6756
  • [4] Electron-phonon interaction in CdTe/CdMnTe/CdMgTe quantum wells
    Wang, XF
    Lima, ICD
    Troper, A
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (09) : 829 - 835
  • [5] Hot luminescence and electron-phonon interaction in structures with quantum wells
    Mirlin, DN
    Zakharchenya, BP
    Reshina, II
    Rodina, AV
    Sapega, VF
    Sirenko, AA
    Ustinov, VM
    Zhukov, AE
    Egorov, AY
    [J]. SEMICONDUCTORS, 1996, 30 (04) : 377 - 380
  • [6] Electron-phonon interaction in II-VI quantum wells
    Maslov, A. Yu.
    Proshina, O. V.
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, 2016, 13 (7-9): : 507 - 509
  • [7] Multiple Changes in the Electron-Phonon Interaction in Quantum Wells with Dielectrically Different Barriers
    Maslov, A. Yu.
    Proshina, O. V.
    [J]. SEMICONDUCTORS, 2023, 57 (02) : 137 - 142
  • [8] OPTICAL VIBRATIONAL-MODES AND ELECTRON-PHONON INTERACTION IN GAAS QUANTUM WELLS
    ZUCKER, JE
    PINCZUK, A
    CHEMLA, DS
    GOSSARD, A
    WIEGMANN, W
    [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (13) : 1280 - 1283
  • [9] Electron-phonon interaction and tunneling escape process in GaAs/AlAs quantum wells
    [J]. 1600, American Inst of Physics, Woodbury, NY, USA (78):
  • [10] Polar optical oscillations in coupled quantum wells: The electron-phonon interaction and scattering
    Shi, JJ
    Pan, SH
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) : 3863 - 3875