SPICE Behavioral Model of the Tunneling Field-Effect Transistor for Circuit Simulation

被引：20

作者：

Hong, Yibin ^{[1
]}

Yang, Yue ^{[1
]}

Yang, Litao ^{[1
]}

Samudra, Ganesh ^{[1
]}

Heng, Chun-Huat ^{[1
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2009年 / 56卷 / 12期

关键词：

Behavioral modeling; inverter; SPICE simulation; tunneling field-effect transistor (TFET);

D O I：

10.1109/TCSII.2009.2035274

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The tunneling field-effect transistor (TFET) is an alternative device for deep-submicrometer CMOS with very good short channel and leakage characteristics. In this brief, a SPICE behavioral model that well captures the I-V characteristics and the parasitic capacitance of the n-channel TFET is proposed to facilitate efficient circuit design and simulation. The validity of the model is verified with technology computer-aided design (TCAD) simulation. The accuracy is within 10% and is of an order of magnitude faster than the TCAD.

引用

页码：946 / 950

页数：5

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