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A general route to printable high-mobility transparent amorphous oxide semiconductors

被引：387
|
作者：
Lee, Doo-Hyoung
Chang, Yu-Jen
Herman, Gregory S.
Chang, Chih-Hung
机构：
[1] Oregon State Univ, Dept Chem Engn, Corvallis, OR 97331 USA
[2] Hewlett Packard Corp, Corvallis, OR 97330 USA
来源：
ADVANCED MATERIALS | 2007年 / 19卷 / 06期
关键词：
D O I：
10.1002/adma.200600961
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A general low-cost method for ink-jet printing transparent amorphous oxide semiconductors (see figure) is presented. The process uses metal halide precursors dissolved in acetonitrile, and this precursor solution is capable of forming a uniform and continuous metal halide thin film over a large area through both ink-jet printing and blanket-coating techniques.
引用
收藏
页码：843 / +
页数：6
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