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Barrier Characterization At Interfaces Of High-Mobility Semiconductors With Oxide Insulators

被引：3
|
作者：
Afanas'ev, V. V. [1 ]
Stesmans, A. [1 ]
机构：
[1] Katholieke Univ Leuven, Dept Phys & Astron, Lab Semicond Phys, B-3001 Leuven, Belgium
来源：
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7 | 2009年 / 25卷 / 06期
关键词：
RAY PHOTOELECTRON-SPECTROSCOPY; ENERGY-BAND ALIGNMENT; PHOTOEMISSION-SPECTROSCOPY; OFFSETS; (100)GE; STATES; FILMS;
D O I：
10.1149/1.3206610
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Internal photoemission and photoconductivity experiments are used to characterize interfaces of high-mobility semiconductors GaAs, InxGa1-xAs, Ge, and Si1-xGex with metal oxide insulators. Compared to silicon, formation of a narrow-gap interlayer and composition-sensitive semiconductor band structure are revealed as the most influential factors affecting the interface barriers.
引用
收藏
页码：95 / 103
页数：9
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