Atomic layer deposition and characterization of Zn-doped Ga2O3 films

被引：10
|
作者：
Baji, Zsofia [1 ]
Cora, Ildiko [1 ]
Horvath, Zsolt Endre [1 ]
Agocs, Emil [1 ]
Szabo, Zoltan [1 ]
机构：
[1] Inst Tech Phys & Mat Sci, 27709 EK,Konkoly Thege M Ut 29-33, H-1121 Budapest, Hungary
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2021年 / 39卷 / 03期
关键词：
D O I：
10.1116/6.0000838
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The present work focuses on the atomic layer deposition (ALD), annealing, and Zn doping of gallium oxide (Ga2O3) films using a novel Ga precursor, hexakis-dimethylamino-digallium. As ALD deposited Ga2O3 films are always amorphous, the optimal annealing procedure had to be found to achieve crystalline beta -Ga2O3. The bandgaps and dielectric properties of the layers were measured and the effects of the deposition parameters and postdeposition annealing on the electrical properties were determined. The effects of Zn doping on the electrical properties were analyzed, and some crucial issues for application as a UV sensor were addressed.
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页数：9
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