Electron drift velocity in high electric fields in zincblende, wurtzite and rocksalt GaN

被引:4
|
作者
Brazis, R. [1 ]
Nausewicz, D. [1 ]
Raguotis, R. [1 ]
机构
[1] Lithuania Acad Sci, Inst Semicond Phys, LT-232600 Vilnius, Lithuania
关键词
TRANSPORT;
D O I
10.1088/1742-6596/193/1/012031
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The influence of GaN crystal symmetry (zincblende, wurtzite, and rocksalt) on the drift velocity of electrons in high electric fields is studied employing Monte Carlo method. The highest drift velocity as well as the most pronounced negative differential mobility is predicted in the zincblende phase. Wurtzite-phase crystals turn out to be inferior in these respects due to the complications of electron and phonon dispersion brought by the lowering symmetry. Experimental data on wurtzite phase reported by Wraback et al. are in excellent agreement with the data of modelling taking into account intense (low-energy phonon-mediated) scattering of electrons between the lowest- and the closely-located upper gamma-valleys. Barker et al. revealed experimentally the velocity-field dependence in cubic GaN to be higher than that in wurtzite phase, however, the experimental drift velocity turned out to be lower than the theoretical one. This might be the signature of coexisting different phases in experimental samples. The rocksalt GaN (still expecting experimental verification) is predicted to manifest the lowest drift velocity of electrons and no negative differential mobility, as a result of the fast exchange of electrons between the lowest-energy X-valleys preventing electron runaway to the upper gamma-valley.
引用
收藏
页数:4
相关论文
共 50 条
  • [21] Drift velocity of electrons in quantum wells in high electric fields
    Mokerov, V. G.
    Vasil'evskii, I. S.
    Galiev, G. B.
    Pozela, J.
    Pozela, K.
    Suziedelis, A.
    Juciene, V.
    Paskevic, C.
    SEMICONDUCTORS, 2009, 43 (04) : 458 - 462
  • [22] Relation between the UV luminescence yield and electron drift velocity in the gaseous xenon at high electric fields
    Lukin, LV
    CHEMICAL PHYSICS, 2003, 291 (03) : 261 - 274
  • [23] Anisotropic Transient and Stationary Electron Velocity in Bulk Wurtzite GaN
    Sridharan, Sriraaman
    Yoder, P. D.
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (11) : 1190 - 1192
  • [24] THE SATURATION OF THE DRIFT VELOCITY OF HOLES AT HIGH ELECTRIC-FIELDS IN DISPERSIONS OF ELECTRON-DONORS IN A POLYMER MATRIX
    VERBEEK, G
    VANDERAUWERAER, M
    DESCHRYVER, FC
    GEELEN, C
    TERRELL, D
    DEMEUTER, S
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1992, 216-18 : 243 - 249
  • [25] Electron transport property in wurtzite GaN at high electric field with Monte Carlo simulation
    Guo Bao-Zeng
    Zhang Suo-Liang
    Liu Xin
    ACTA PHYSICA SINICA, 2011, 60 (06)
  • [26] Structural phase transitions in high-pressure wurtzite to rocksalt phase in GaN and SiC
    Xiao, H. Y.
    Gao, F.
    Wang, L. M.
    Zu, X. T.
    Zhang, Y.
    Weber, W. J.
    APPLIED PHYSICS LETTERS, 2008, 92 (24)
  • [27] A QUANTUM DESCRIPTION OF DRIFT VELOCITY OVERSHOOT AT HIGH ELECTRIC-FIELDS IN SEMICONDUCTORS
    ROSSI, F
    JACOBONI, C
    SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1411 - 1415
  • [28] Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors
    Bagnall, Kevin R.
    Dreyer, Cyrus E.
    Vanderbilt, David
    Wang, Evelyn N.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (15)
  • [29] Structural and electronic properties of wurtzite, zincblende and rocksalt Al1-xInxN ternary alloys at ambient and high pressure
    Meziani, Abdelhakim
    Semra, Lemia
    Telia, Azzedine
    Unlu, Hilmi
    Allouche, Abdul-Rahman
    PHASE TRANSITIONS, 2018, 91 (12) : 1232 - 1245
  • [30] Analytical theory of electron mobility and drift velocity in GaN
    Gelmont, BL
    Shur, MS
    Stroscio, M
    III-V NITRIDES, 1997, 449 : 609 - 614