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Theory for linear and nonlinear planar Hall effect in topological insulator thin films
被引:28
|作者:
Rao, Wen
Zhou, Yong-Long
Wu, Yong-jia
Duan, Hou-Jian
[1
]
Deng, Ming-Xun
Wang, Rui-Qiang
机构:
[1] South China Normal Univ, Sch Phys & Telecommun Engn, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Peoples R China
基金:
中国国家自然科学基金;
中国博士后科学基金;
关键词:
ANISOTROPIC MAGNETORESISTANCE;
SURFACE;
D O I:
10.1103/PhysRevB.103.155415
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Recently, the linear and nonlinear planar Hall effect (PHE) on the topological insulators (TIs) surface has been extensively studied in experiments. To explain this phenomenon, various microscopic mechanisms are proposed theoretically, and one has to employ different mechanisms to separately understand the linear and nonlinear PHE even for the same system. Here, we study the planar magnetic resistance effect in TI thin film and find that a peculiar anisotropic scattering and a spin valve structure with respect to the PHE can be caused by the tilt and shift of Dirac cones, respectively, which are induced by the combination of spin-momentum locking of surface states and an in-plane magnetic field. The tilt and shift effects can act as the origin of both the linear and nonlinear PHE by distorting the spin texture of surface states or forming the spin polarization. These two mechanisms interplay and dominate, respectively, in strong coupling (thin TI) and decoupling (thick TI) between bottom and top surfaces. For thick TI film, we show that both the linear and nonlinear PHEs induced by the tilt effect can recover the results observed in recent experiments. Our theory provides a perspective to understand the origin of both linear and nonlinear PHE observed in recent experiments.
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页数:7
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