Molecular dynamics simulations for gas cluster ion beam processes

被引：38

作者：

Aoki, Takaaki ^{[1
]}

Seki, Toshio ^{[2
]}

Matsuo, Jiro ^{[3
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto, Japan

[2] Kyoto Univ, Dept Nucl Engn, Nishikyo Ku, Kyoto 606, Japan

[3] Kyoto Univ, Quantum Sci & Engn Ctr, Nishikyo Ku, Kyoto, Japan

来源：

VACUUM | 2010年 / 84卷 / 08期

关键词：

Cluster ion beam; Molecular dynamics simulation; Crater formation; Surface modification; SURFACE MODIFICATION;

D O I：

10.1016/j.vacuum.2009.11.018

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Molecular dynamics (MD) simulations of large argon clusters impacting on silicon targets were performed. The characteristics of crater formation, a typical collisional effect with large cluster impact were examined from the viewpoint of incident energy, cluster size and incident angle. The MD simulation results suggested that the condition where an incident cluster penetrates into the solid target and causes a crater is mainly dominated by the incident energy-per-atom rather than total incident energy of the cluster. Additionally, the MD simulations of sequential multiple cluster impacts and grazing-angle cluster irradiation on irregular surface structures were studied to characterize the surface modification effects with large cluster ion beam process. (C)2009 Elsevier Ltd. All rights reserved.

引用

页码：994 / 998

页数：5

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