High-efficiency, High-power Class-D Power Amplifier with 50W Output Using GaN Devices

被引：1

作者：

Park, Yeun Jeong ^{[1
]}

Lee, Kang-Yoon ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon, South Korea

来源：

12TH INTERNATIONAL CONFERENCE ON UBIQUITOUS AND FUTURE NETWORKS (ICUFN 2021) | 2021年

关键词：

Full-Brigde GaN core; High Efficiency; Class-D Power Amplifier; Dead-Time Geverator; Voltage Control Delay Loop(VCDL);

D O I：

10.1109/ICUFN49451.2021.9528632

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN (Gallium nitride) semiconductors have more than 10 times the power density of Si-based Latterly Diffused Metal Oxide Semiconductor (LDMOS) transistors used in conventional Power Amplifiers, enabling more than 30% power savings and higher power density and efficiency. In this paper, we design a high-efficiency, high-power Class-D Power Amplifier with output higher than 40W by controlling the full-bridge structure composed of GaN elements using GaN drivers. The proposed Power Amplifier uses the Samsung 180nm process and designs 5 V as supply power.

引用

页码：44 / 47

页数：4

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