High-efficiency, High-power Class-D Power Amplifier with 50W Output Using GaN Devices

被引：1
|
作者：
Park, Yeun Jeong [1 ]
Lee, Kang-Yoon [1 ]
机构：
[1] Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon, South Korea
来源：
12TH INTERNATIONAL CONFERENCE ON UBIQUITOUS AND FUTURE NETWORKS (ICUFN 2021) | 2021年
关键词：
Full-Brigde GaN core; High Efficiency; Class-D Power Amplifier; Dead-Time Geverator; Voltage Control Delay Loop(VCDL);
D O I：
10.1109/ICUFN49451.2021.9528632
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaN (Gallium nitride) semiconductors have more than 10 times the power density of Si-based Latterly Diffused Metal Oxide Semiconductor (LDMOS) transistors used in conventional Power Amplifiers, enabling more than 30% power savings and higher power density and efficiency. In this paper, we design a high-efficiency, high-power Class-D Power Amplifier with output higher than 40W by controlling the full-bridge structure composed of GaN elements using GaN drivers. The proposed Power Amplifier uses the Samsung 180nm process and designs 5 V as supply power.
引用
收藏
页码：44 / 47
页数：4
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