Defect Formation in III-V Fin Grown by Aspect Ratio Trapping Technique: A First-Principles Study

被引：0

作者：

Minari, H. ^{[1
]}

Yoshida, S. ^{[1
]}

Sawada, K. ^{[1
]}

Nakazawa, M. ^{[1
]}

Pourtois, G. ^{[2
]}

Merckling, C. ^{[2
]}

Waldron, N. ^{[2
]}

Guo, W. ^{[2
]}

Jiang, S. ^{[2
]}

Collaert, N. ^{[2
]}

Simoen, E. ^{[2
]}

Lin, D. ^{[2
]}

Caymax, M. ^{[2
]}

机构：

[1] IMEC, Atsugi, Kanagawa, Japan

[2] IMEC VZW, Leuven, Belgium

来源：

2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2014年

关键词：

III-V FinFET; aspect ratio trapping; ab initio study; defect in insulators; Mg/Zn doping; selective epitaxial growth;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

First-principles investigations are used to study the formation of defects in III-V fins grown using the aspect ratio trapping technique. We show that, during the growth of the IIIV, the formation of intermediate chemical states with the precursors leads to the creation of in-diffused Mg/Zn and Al2O3 sub-oxide. Our prediction is consistent with the experimental observations. These defect formations could be at the origin of the degradation of the electrical reliability of III-V fin-shaped field-effect transistors and the cause of the increasing difficulties met in the fabrication of III-V fin.

引用

页数：5

共 50 条

[21] Structural, mechanical, and electronic properties of 25 kinds of III-V binary monolayers: A computational study with first-principles calculation
Liu, Xue-Fei
Luo, Zi-Jiang
Zhou, Xun
Wei, Jie-Min
Wang, Yi
Guo, Xiang
Lv, Bing
Ding, Zhao
CHINESE PHYSICS B, 2019, 28 (08)
[22] X-ray magnetic dichroism in III-V diluted magnetic semiconductors: First-principles calculations
Antonov, V. N.
Yaresko, A. N.
Jepsen, O.
PHYSICAL REVIEW B, 2010, 81 (07)
[23] Chemical trend in the electronic structure of Fe-doped III-V semiconductors and possible origin of ferromagnetism: A first-principles study
Sakamoto, Shoya
Fujimori, Atsushi
JOURNAL OF APPLIED PHYSICS, 2019, 126 (17)
[24] Optical properties of amorphous III-V compound semiconductors from first principles study
Wang, Liang
Chen, Xiaoshuang
Lu, Wei
Huang, Yan
Zhao, Jijun
SOLID STATE COMMUNICATIONS, 2009, 149 (15-16) : 638 - 640
[25] Monolayer honeycomb structures of group-IV elements and III-V binary compounds: First-principles calculations
Sahin, H.
Cahangirov, S.
Topsakal, M.
Bekaroglu, E.
Akturk, E.
Senger, R. T.
Ciraci, S.
PHYSICAL REVIEW B, 2009, 80 (15)
[26] Curie temperatures of III-V diluted magnetic semiconductors calculated from first-principles in mean field approximation
Sato, K
Katayama-Yoshida, H
Dederichs, PH
JOURNAL OF SUPERCONDUCTIVITY, 2003, 16 (01): : 31 - 35
[27] First-principles calculation of the piezoelectric tensor (d)over-left-right-arrow of III-V nitrides
Bernardini, F
Fiorentini, V
APPLIED PHYSICS LETTERS, 2002, 80 (22) : 4145 - 4147
[28] N-doping induced band-gap reduction in III-V semiconductors: First-principles calculations
Ishikawa, Masato
Nakayama, Takashi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 2011, 8 (02): : 352 - 355
[29] First-principles calculation of stable magnetic state and Curie temperature in transition metal doped III-V semiconductors
Shahjahan, M.
Razzakul, I. M.
Rahman, M. M.
COMPUTATIONAL CONDENSED MATTER, 2016, 9 : 67 - 71
[30] A study of hydrogen trapping behaviors in Nb and V carbides in α-Fe matrix by first-principles calculations
He, Yang
Xia, Qihui
Ding, Lei
Li, Yaojun
Li, Zhiqiang
Zhang, Xuan
Jin, Shaowei
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2024, 94 : 244 - 255

← 1 2 3 4 5 →