Challenges of Monolithic integration for SiGe MEMS Technology

被引：0
|
作者：
Chaudhuri, A. Ray [1 ,2 ]
Severi, S. [1 ]
Helin, P. [1 ]
Francis, L. A. [2 ]
Tilmans, H. A. C. [1 ]
机构：
[1] IMEC, Leuven, Belgium
[2] Catholic Univ Louvain, Leuven, Belgium
来源：
2016 IEEE SENSORS | 2016年
关键词：
CMOS-MEMS accelerometer; SiGeMEMS; foundry CMOS; monolithic integration; VHF release;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper describes the key challenges of CMOS integrated monolithic MEMS Accelerometer with SiGe MEMS technology combined with TSMC 0.18 fun CMOS technology. The developed SiGe MEMS technology shows ability to integrate above any standard foundry process. This allows us to build the smallest form-factor surface micromachined accelerometer for the consumer application in the range of 2G. The total area of the Accelerometer including the MEMS structure and CMOS is 1.35 tiun x 1.35 nun
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页数：3
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