High precision alignment in multi-layer NanoImprint lithography

被引：0

作者：

Muehlberger, M. ^{[1
]}

Schwinger, W. ^{[1
]}

Gmainer, M. ^{[1
]}

Schoeftner, R. ^{[1
]}

Glinsner, T. ^{[2
]}

Hasenfub, Ch. ^{[3
]}

Hingerl, K. ^{[3
]}

Schmidt, H. ^{[4
]}

Kley, E. -B. ^{[4
]}

机构：

[1] Profactor GmbH, Stadtgut A2, A-4407 Steyr, Austria

[2] EV Grp, Forian, Austria

[3] CD Lab Surface Opt, Linz, Austria

[4] Friedrich Schiller Univ, Jena, Germany

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

nanoimprint lithography; UV-NIL; alignment; Moire;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanoimprint lithography (NIL) is a cost efficient technique for the mass production of nanostructures. We demonstrate alignment accuracies in the range of 100 nm and below in UV nanoimprint lithography (UV-NIL) using a simple optical technique. The advantages of this technique are the relative simplicity of the marker-design and the whole setup combined with the possibility of an upgrade of existing equipment and still ultra-high precision alignment capabilities.

引用

页码：1495 / +

页数：2

共 50 条

[21] Multi-layer BARCs for Hyper-NA immersion lithography process
Sakaida, Yasushi
Takei, Satoshi
Nakajima, Makoto
Kimura, Shigeo
Sakaguchi, Takahiro
Hashimoto, Keisuke
Imamura, Hikaru
ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXIV, 2007, 6519
[22] Tailored multi-layer graphene arrays for precision detection of neurotransmitter
Al-Hagri, Abdulrahman
Alagumalai, Krishnapandi
Palanisamy, Selvakumar
Bharath, G.
Chiesa, Matteo
Al Ghaferi, Amal
Kim, Seong-Cheol
Al Hajri, Ebrahim
JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, 2024, 140 : 196 - 205
[23] Homogeneity of Residual Layer thickness in UV Nanoimprint Lithography
Hiroshima, Hiroshi
Atobe, Hidemasa
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (06) : 06FH181 - 06FH184
[24] Homogeneity of residual layer thickness in UV nanoimprint lithography
National Institute of Advanced Industrial Science and Technology , AIST East 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
不详
Jpn. J. Appl. Phys., 6 PART 2 (06FH181-06FH184):
[25] Guiding Chart for Initial Layer Choice with Nanoimprint Lithography
Mayer, Andre
Scheer, Hella-Christin
NANOMATERIALS, 2021, 11 (03) : 1 - 30
[26] Challenges of residual layer minimisation in thermal nanoimprint lithography
Bogdanski, Nicolas
Wissen, Matthias
Moellenbeck, Saskia
Scheer, Hella-Christin
EMLC 2007: 23RD EUROPEAN MASK AND LITHOGRAPHY CONFERENCE, 2007, 6533
[27] High-precision ethanol concentration microsensor with global spectra aided by the multi-layer perceptron
Wang, Xiaohui
Liu, Wenyao
Chen, Huiyu
Wang, Canjin
Tan, Qingyun
Mi, Runyao
Wang, Rong
Zhow, Yanru
Xing, Enbo
Tang, Jun
Liu, Jun
OPTICS EXPRESS, 2024, 32 (24): : 42983 - 42992
[28] Nanoimprint Lithography -A Next Generation High Volume Lithography Technique
R. Pelzer
P. Lindner
T. Glinsner
B.Vratzov
C.Gourgon
S.Landis
P. Kettner
C. Schaefer
半导体技术, 2004, (07) : 86 - 91
[29] Near-zero-residual layer nanoimprint based on hybrid nanoimprint soft lithography
Cui, Yushuang
Lu, Jingjun
Fu, XinXin
Bian, Jie
Yuan, Changsheng
Ge, Haixiong
Chen, Yanfeng
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 121 (02): : 371 - 375
[30] Deformation of a LCD Glass-Panel by Alignment Process in Nanoimprint Lithography
Park, I.
Yim, H.
Jang, S.
Shin, D.
Lim, S.
Jeong, J. I.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2009, 9 (02) : 684 - 687

← 1 2 3 4 5 →