High precision alignment in multi-layer NanoImprint lithography

被引：0

作者：

Muehlberger, M. ^{[1
]}

Schwinger, W. ^{[1
]}

Gmainer, M. ^{[1
]}

Schoeftner, R. ^{[1
]}

Glinsner, T. ^{[2
]}

Hasenfub, Ch. ^{[3
]}

Hingerl, K. ^{[3
]}

Schmidt, H. ^{[4
]}

Kley, E. -B. ^{[4
]}

机构：

[1] Profactor GmbH, Stadtgut A2, A-4407 Steyr, Austria

[2] EV Grp, Forian, Austria

[3] CD Lab Surface Opt, Linz, Austria

[4] Friedrich Schiller Univ, Jena, Germany

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

nanoimprint lithography; UV-NIL; alignment; Moire;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanoimprint lithography (NIL) is a cost efficient technique for the mass production of nanostructures. We demonstrate alignment accuracies in the range of 100 nm and below in UV nanoimprint lithography (UV-NIL) using a simple optical technique. The advantages of this technique are the relative simplicity of the marker-design and the whole setup combined with the possibility of an upgrade of existing equipment and still ultra-high precision alignment capabilities.

引用

页码：1495 / +

页数：2

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