High-voltage CMOS detectors

被引：3
|
作者：
Ehrler, F. [1 ]
Blanco, R. [1 ]
Leys, R. [1 ]
Peric, I. [1 ]
机构：
[1] Karlsruhe Inst Technol, Inst Data Processing & Elect IPE, D-76344 Eggenstein Leopoldshafen, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2016年 / 824卷
关键词：
High-voltage pixel detector; Monolithic pixel detector; HVMAPS; Capacitive coupled pixel detector; CCPD; Time walk compensating comparator; Mu3e; ATLAS; PARTICLE-DETECTOR;
D O I：
10.1016/j.nima.2015.09.004
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：400 / 401
页数：2
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