DRY PLASMA CLEANING BY ADVANCED HDRF TECHNOLOGY (HIGH DENSITY RADICAL FLUX)

被引:0
|
作者
Pilloux, Yannick [1 ]
机构
[1] Plasma Therm LCC, St Petersburg, FL 33716 USA
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中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Semiconductor industry has been focused over decades on Dry etch and deposition technologies, while cleaning was mainly wet technology. Die size are shrinking in main applications, as well as reducing packaging size. Thus, limitation of wet chemistry is leaving space to dry plasma cleaning. This paper will focus on how dry Plasma technology named HDRF, for High Density Radical Flux, can provide efficient cleaning solution without damaging sensitive layer like GaN, TiN, and keep low temperature processing. In addition, moving from wet to dry cleaning technology, allow to eliminate all dirty processes and keep green environment.
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页数:2
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