Novel Electrostatically Tunable FeGaB/(Si)/PMN-PT Multiferroic Heterostructures for Microwave Application

被引:10
|
作者
Lou, Jing [1 ]
Reed, David [1 ]
Liu, Ming [1 ]
Pettiford, Carl [1 ]
Sun, Nian X. [1 ]
机构
[1] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
关键词
FeGaB; Multiferroic; Magnetoelectric; Microwave; Tunable Devices; BEHAVIOR;
D O I
10.1109/MWSYM.2009.5165625
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Strong magnetoelectric (ME) coupling can be realized in multiferroic heterostructures, which have led to a variety of devices. However, it has been challenging in achieving strong ME coupling at microwave frequencies. Here, we report on novel FeGaB/Si/PMN-PT and FeGaB/PMN-PT microwave multiferroic heterostructures, which show strong ME. coupling at both DC and microwave frequencies. A high microwave frequency tunability of Delta f = 900 MHz or Delta f/f = 58%, which is equivalent to a magnetic field tunable range of similar to 30 Oe, was demonstrated in the FeGaB/Si/PMN-PT heterostructures. By eliminating the Si substrate, which acts to impede the ME coupling, a much larger tunable magnetic field range of similar to 330 Oe was observed in the FeGaB/PMN-PT heterostructures. These multiferroic heterostructures with strong ME coupling provide great opportunities for electrostatically tunable ME microwave devices.
引用
收藏
页码:33 / 36
页数:4
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