A High-Efficiency 21W GaN Power amplifier MMIC for K-Band Satellite Communications

被引：0
|
作者：
Liu, Wenliang [1 ]
Yi, Chupeng [1 ]
Wang, Yuchen [1 ]
Zhou, Jiuding [1 ]
Lu, Yang [1 ]
Deng, Jingya [1 ]
Ma, Xiaohua [1 ]
机构：
[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China
来源：
2022 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT) | 2022年
基金：
中国博士后科学基金; 中国国家自然科学基金;
关键词：
GaN; Power amplifier; High efficiency; Silicon Carbide;
D O I：
10.1109/ICMMT55580.2022.10023158
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high efficiency 17.5-20.5 GHz high-power amplifier (HPA) microwave integrated circuit (MMIC) is designed with an advanced 0.15 pm Gallium Nitride (GaN) HEMT technology on silicon carbide (SiC) substrate. Low loss and wideband output matching networks are applied to improve efficiency and power. With chip dimensions of 3.6x4.0 mm(2), the power amplifier achieves 43.2dBm (21W) saturated output power with 43% power-added efficiency (PAE), and 21dB power gain is obtained over the frequency band. It is worth mentioning that the PAE is higher than 41% from 18-20.5GHz.
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页数：3
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