MOSFET stability analysis for RFIC design applications

被引：0
|
作者：
Guo, W [1 ]
Huang, DQ [1 ]
机构：
[1] Zhejiang Univ, Dept Informat Sci & Elect Engn, Radio Frequency & Microwave Technol Lab, Hangzhou 310027, Peoples R China
来源：
2002 3RD INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS | 2002年
关键词：
stability; y-parameter; MOSFET; RFIC;
D O I：
10.1109/ICMMT.2002.1187700
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using y-parameters, detailed MOSFET stability analysis for RFIC design is presented in this paper. According to the theoretical analysis results, a single MOSFET is conditionally stable. Therefore, in order for a MOSFET to work unconditionally stably, suitable measures must be taken in the circuit design. The computer aided simulation results are also given in the paper, which show a good agreement with the theoretical analysis conclusions.
引用
收藏
页码：315 / 317
页数：3
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