Analytical Drain Current Modeling of The Double-Gate Tunnel-FETs

被引：0

作者：

Naseri, Banafshe ^{[1
]}

Hosseini, Ebrahim ^{[1
]}

机构：

[1] Ferdowsi Univ Mashhad, Elect Engn Dept, Mashhad, Razavi Khorasan, Iran

来源：

2020 28TH IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE) | 2020年

关键词：

Analytical model; band-to-band tunneling (BTBT); Double-gate tunnel FET (DG-TFET); tangent line approximation method;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, our goal is to develop an analytical model for the drain current of double-gate silicon tunnel FETs (DG-Si-TFETs). In this model, the effect of mobile charge carriers and depletion regions of the source and drain are considered, which increases the accuracy of the model. The drain current is obtained based on Kane's model by using the tangent line approximation (TLA) method. To evaluate the proposed model, the model results are compared with TCAD simulation results for various bias and parameters such as gate oxide dielectric constant and channel thickness.

引用

页数：5

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